? 2008 ixys corporation, all rights reserved ds98885a(11/08) v dss = 200v i d25 = 60a r ds(on) 38 m t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c, r gs = 1m 200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c60a i dm t c = 25 c, pulse width limited by t jm 240 a i a t c = 25 c60a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss ,t j 150 c 10 v/ns p d t c = 25 c 320 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g ixfh60N20F ixft60N20F symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 200 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 1.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 38 m hiperrf tm power mosfet f-class: megahertz switching features z international standard packages z avalanche rated z rf capable mosfets z double metal process for low gate resistnace z low package inductance z fast intrinsic diode advantages z easy to mount z space savings z high power density applications: z switched-mode and resonant-mode power supplies, >500khz switching z dc-dc converters z laser drivers z 13.5 mhz industrial applications z pulse generation g = gate d = drain s = source tab = drain advance technical information to-268 g s tab to-247 tab free datasheet http://www.0pdf.com
ixys reserves the right to change limits, test conditions, and dimensions. ixfh60N20F ixft60N20F symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 18 26 s c iss 2930 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 940 pf c rss 320 pf t d(on) 15 ns t r resistive switching times 14 ns t d(off) v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 42 ns t f r g = 2 (external) 7.0 ns q g(on) 100 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 nc q gd 46 nc r thjc 0.39 c /w r thcs (to-247) 0.25 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 60 a i sm repetitive, pulse width limited by t jm 240 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 200 ns q rm 0.8 c i rm 10 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v to-268 (ixft) outline advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixfh) outline free datasheet http://www.0pdf.com
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